National Institute of Astrophysics, Optics and Electronics (INAOE) – Mexico
Tuesday, Aug. 28 – 10:40h – Malbec A
DC and RF reliability of advanced CMOS technologies
I review the different experimental strategies and models to stress and degrade CMOS devices under DC and RF conditions. Based on the experimental results different reliability models for different CMOS technologies are introduced. We found out that RF stress causes a larger degradation or lesser reliability than DC stress. The experiments and models are introduced and analysed from DC up to 65 GHz.
Prof Gutiérrez-D. received his PhD from the Catholic University of Leuven, Belgium in 1993, with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K down to 4.2K”. From 1988 to 1993 was a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1993 joined as a researcher the Department of Electronics of INAOE. In 1996 spent one year as invited Professor at the Simon Fraser University in Vancouver, Canada. In 1996 he also spent two months at the University of Sao Paulo, Brazil as a Summer PhD lecturer. From 1999 to 2000 was appointed Head of the INAOE Department of Electronics. From 2000 to 2002 spent two years as Design Manager of the Motorola Mexico Center for Semiconductor Technology in Puebla City. In 2002 he was also invited Professor at the Technical University of Vienna, Austria. From 2002 to 2005 rejoined INAOE as Professor of the Department of Electronics. From 2005 to 2007 was the Research Manager of the Intel Systems Research Center Mexico in Guadalajara City.
Prof. Gutiérrez is author of the books “Low Temperature Electronics, Physics, Devices, Circuits and Applications” (Academic Press, 2000), and “Nano-Scaled Semiconductor Devices, Physics, Modelling, Characterisation, and Societal Impact”, IET Press, 2016. He has supervised 7 M.Sc. and 13 PhD theses, and has published more than 120 scientific papers and conferences in the field of physics of semiconductor materials and devices, including MOS transistors, temperature, optical, and magnetic sensors.
Prof. Gutiérrez-D. is Associate Editor of Electron Device Letters.
Currently Prof. Gutierrez is with the Department of Electronics of the National Institute of Astrophysics, Optics and Electronics (INAOE) in Puebla, Mexico. Prof. Gutiérrez is member of different Review Committees of the Mexico National Council of Science and Technology (CONACyT), and Senior Member of the IEEE organization.
Tutorial realized together with the 2018 EDS Brazil Mini-Colloquium, co-organized by EDS FEI Student Chapter.