{"id":969,"date":"2018-07-16T21:51:10","date_gmt":"2018-07-17T00:51:10","guid":{"rendered":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/?page_id=969"},"modified":"2018-08-20T11:46:25","modified_gmt":"2018-08-20T14:46:25","slug":"sbmicro-invited-talk-jose-alexandre-diniz","status":"publish","type":"page","link":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/sbmicro-invited-talk-jose-alexandre-diniz\/","title":{"rendered":"SBMicro Invited Talk: Jos\u00e9 Alexandre Diniz"},"content":{"rendered":"

Jos\u00e9 Alexandre Diniz<\/span>
\nUnicamp<\/span><\/strong> \u2013<\/span><\/strong> Brazil<\/span>
\n<\/strong>Thursday, Aug. 30 \u2013 13:40h – Malbec A<\/strong><\/span><\/p>\n

\"\"

Jose Alexandre Diniz<\/strong><\/p><\/div>\n

SBMICRO INVITED TALK:
\nUltra-Thin and Thin Films for Nano and Micron Technologies<\/strong><\/h2>\n

This work presents the formation and characterization of different films (Pt, TiN, TaN, TiAlO, TiAlON, SiNx, SiO2 and SiON), which were obtained using different vacuum systems, such as: Sputtering, Electron Cyclotron Resonance (ECR)-Chemical Vapor Depositon (CVD), Electron Beam Evaporator (EBE), Focused Ion Beam (FIB) and Electron Beam Lithography (EBL). These films can be ultra-thin and thin, with thickness values, respectively, between 1.5 nm and 20 nm, and thicker than 20 nm up to 300 nm. Furthermore, these films are used to obtain electronic devices based on MOS (Metal-Oxide-Semiconductor), HBT (Heterojunction Bipolar Transistor) and Graphene technologies, with nano and micron dimensions. It is important to notice that, these technologies and facilities are developed and installed, respectively, at University of Campinas in Brazil.
\nToday, the MOS transistors, which are used in actual high performance integrated circuit, have three crystalline planes of conduction channel into the silicon nano wires (SiNW) and are named 3D MOS transistors. In this work, to define the SiNWs, FIB milling of Si substrate is used. Thus, we can fabricate two kinds of 3D MOS transistors, JunctionLess (JL) and FinFETs (Fin Field Effect Transistors). The metals, which are used in these devices for drain, source and gate electrodes, are Pt (100 nm), deposited by FIB, TiN (20 nm) and Al (100 nm), deposited by sputtering. The gate dielectrics are the traditional SiO2, obtained by FIB deposition and thermal oxidation of Si, and high-k insulators, such as SiON (3 nm), obtained by plasma oxynitrdation in ECR system, and TiAlON (8nm), obtained by Ti (0.7nm)\/Al (0.3nm) deposition using EBE with additional plasma oxynitridation in ECR system.
\nHBT devices are used for high frequency (> 10 GHz) applications. To get the high performance for these frequencies, the surface passivation, mainly, between emitter and base regions, allows the leakage current reduction, which results the current gain. Our HBTs are based on III-V semiconductors (InGaP\/GaAs) and the passivation layer (60nm) is SiNx, obtained by ECR-CVD.
\nThe FET devices with Graphene conduction channel (GraFETs) are fabricated using Graphenes obtained by CVD and TiN (100 nm) or TaN (100 nm) electrodes for source and drain contacts, deposited by Sputtering.
\nThe structural characteristics of all films are extracted from EDS (X-Ray Energy Dispersive Spectroscopy), for the composition, SEM (Scaning Electron Microscopy) and OM (Optical Microscopy), for surface analysis, Raman Spectroscopy, for crystallinity structure, Ellipsometry, for thickness and refractive index. The electrical characteristics of all devices are extracted from Current versus Voltage (I-V) curves.<\/p>\n

Other Colaborators of this Work:
\n<\/strong><\/h2>\n

L.P.B.Lima, A. Leonhardt, C.V. Carnio, A. M. Rosa, C.R. Almeida, A. M. Pascon, A. R. Silva, F. H. Cioldin, L.B. Zoccal, I. Doi and L. T. Manera<\/p>\n","protected":false},"excerpt":{"rendered":"

Jos\u00e9 Alexandre Diniz Unicamp \u2013 Brazil Thursday, Aug. 30 \u2013 13:40h – Malbec A SBMICRO INVITED TALK: Ultra-Thin and Thin Films for Nano and Micron Technologies This work presents the formation and characterization of...<\/p>\n","protected":false},"author":685,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_crdt_document":"","footnotes":""},"class_list":["post-969","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/P9e0OP-fD","jetpack_likes_enabled":false,"jetpack-related-posts":[{"id":1042,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/sbmicro-2018-technical-program\/","url_meta":{"origin":969,"position":0},"title":"SBMicro 2018 Technical Program","author":"agostini","date":"19\/07\/2018","format":false,"excerpt":"SBMicro 2018 Final Technical Program \u00a0 Tuesday, Aug. 28 \u00a0 9:00h Malbec B \u2013 Tutorial Integrated switched-capacitor DC-DC converters for high-density capacitive energy storage Filip Tavernier (KU Leuven \u2013 Belgium) 10:20h Carmen\u00e8re - Coffee-Break 10:40h Malbec A \u2013 Tutorial DC and RF reliability of advanced CMOS technologies Edmundo Gutierrez (INAOE\u2026","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":986,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/program-schedule\/","url_meta":{"origin":969,"position":1},"title":"Program Schedule","author":"agostini","date":"18\/07\/2018","format":false,"excerpt":"Chip in the Pampa 2018 Schedule Monday, Aug. 27 9:00h Assemblage - Event Registration 13:40h Pinot C - Meeting of SBMicro Board 13:40h Pinot D - Meeting of SBC\/CECCI Board 15:40h Pinot Lobby - Coffee-Break 16:20h Pinot A - Meeting of SBCCI Steering Committee 16:20h Pinot B - Meeting of\u2026","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":788,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/sbmicro-2018-tayeb-mohammed-brahim\/","url_meta":{"origin":969,"position":2},"title":"SBMicro Invited Talk: Tayeb Mohammed-Brahim","author":"agostini","date":"08\/06\/2018","format":false,"excerpt":"Tayeb Mohammed-Brahim Rennes 1 University - France Friday, Aug. 31 \u2013 13:40h - Malbec A SBMICRO INVITED TALK: Organic Thin Film Transistors: Experimental and Modeling Flexible electronics becomes a major research domain due to the fast growing market. The overall revenue of wearable technology was $38 billion in 2017 and\u2026","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"https:\/\/i0.wp.com\/wp.ufpel.edu.br\/chipinthepampa2018\/files\/2018\/06\/tayebBrahim.jpg?resize=350%2C200&ssl=1","width":350,"height":200},"classes":[]},{"id":999,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/sbmicro-invited-talk\/","url_meta":{"origin":969,"position":3},"title":"SBMicro Invited Talk: Gilson Inacio Wirth","author":"agostini","date":"19\/07\/2018","format":false,"excerpt":"Gilson Inacio Wirth Federal University of Rio Grande do Sul - Brazil Wednesday, Aug. 29 -\u00a013:40h - Malbec A SBCCI INVITED TALK: Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability Charge capture and emission by defects (traps) close to the Dielectric-Semiconductor interface is known to be the\u2026","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"https:\/\/i0.wp.com\/wp.ufpel.edu.br\/chipinthepampa2018\/files\/2018\/07\/Gilson.jpg?resize=350%2C200&ssl=1","width":350,"height":200},"classes":[]},{"id":1410,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/women-in-microelectronics-panel\/","url_meta":{"origin":969,"position":4},"title":"Women in Microelectronics Panel (in Portuguese)","author":"agostini","date":"19\/08\/2018","format":false,"excerpt":"Women in Microelectronics Panel\u00a0 The panel will be in Portuguese Wednesday, Aug. 29 16:20h Pinot C Fernanda Gusmao de Lima Kastensmidt (UFRGS) Andrea Labrudi Tavares (Cadence) Nilton Morimoto (SBMicro) Alexandre Guilherme Motta Sarmento (CNPq) Moderator: Linnyer Beatrys Ruiz (UEM) \u00a0","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":674,"url":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/sbmicro-2018-mohammad-al-faruque\/","url_meta":{"origin":969,"position":5},"title":"Tutorial: Edmundo Gutierrez","author":"agostini","date":"26\/04\/2018","format":false,"excerpt":"Edmundo Gutierrez National Institute of Astrophysics, Optics and Electronics (INAOE) - Mexico Tuesday, Aug. 28 - 10:40h -\u00a0Malbec A \u00a0 TUTORIAL: DC and RF reliability of advanced CMOS technologies I review the different experimental strategies and models to stress and degrade CMOS devices under DC and RF conditions. Based on\u2026","rel":"","context":"Post similar","block_context":{"text":"Post similar","link":""},"img":{"alt_text":"","src":"https:\/\/i0.wp.com\/wp.ufpel.edu.br\/chipinthepampa2018\/files\/2018\/04\/21edmundo-333x400.jpg?resize=350%2C200&ssl=1","width":350,"height":200},"classes":[]}],"_links":{"self":[{"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/pages\/969","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/users\/685"}],"replies":[{"embeddable":true,"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/comments?post=969"}],"version-history":[{"count":7,"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/pages\/969\/revisions"}],"predecessor-version":[{"id":1517,"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/pages\/969\/revisions\/1517"}],"wp:attachment":[{"href":"https:\/\/wp.ufpel.edu.br\/chipinthepampa2018\/wp-json\/wp\/v2\/media?parent=969"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}